DMA10P1200HR phase leg standard rectifier 1 2 3 part number DMA10P1200HR backside: isolated fav f v v 1.18 rrm 10 1200 = v = v i = a 2x features / advantages: applications: package: planar passivated chips very low leakage current very low forward voltage drop improved thermal behaviour diode for main rectification for single and three phase bridge configurations iso247 industry standard outline rohs compliant epoxy meets ul 94v-0 soldering pins for pcb mounting backside: dcb ceramic reduced weight advanced power cycling isolation voltage: v~ 3600 the data contained in this product data sheet is ex clusively intended for technically trained staff. t he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect t o his application. the specifications of our compon ents may not be considered as an assurance of compo nent characteristics. the information in the valid application- and assembly notes must be considered. should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. due to technical requirements our product may conta in dangerous substances. for information on the typ es in question please contact your local sales offi ce. should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. for any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. terms conditions of usage: ixys reserves the right to change limits, condition s and dimensions. 20170213b data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
DMA10P1200HR v = v a2s a2s a2s a2s symbol definition ratings typ. max. i r v i a v f 1.23 r 2 k/w r min. 10 v rsm v 10 t = 25c vj t = c vj ma 0.2 v = v r t = 25c vj i = a f v t = c c 145 p tot 75 w t = 25c c r k/w 10 1200 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation conditions unit 1.46 t = 25c vj 150 v f0 v 0.81 t = c vj 175 r f 34 m ? v 1.18 t = c vj i = a f v 10 1.49 i = a f 20 i = a f 20 threshold voltage slope resistance for power loss calculation only a 150 v rrm v 1200 max. repetitive reverse blocking voltage t = 25c vj c j 4 junction capacitance v = v; 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 175 120 130 50 50 aa a a 100 110 72 70 1200 fav rectangular average forward current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 1300 0.25 ixys reserves the right to change limits, condition s and dimensions. 20170213b data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
DMA10P1200HR ratings 000000 yywwz logo part number datecode assembly code abcdef product marking assembly line d m a 10 p 1200 hr part description diode standard rectifier (up to 1800v) phase leg iso247 (3) = = = current rating [a] reverse voltage [v] = = = = package t op c m d nm 1.2 mounting torque 0.8 t vj c 175 virtual junction temperature -55 weight g 6 symbol definition typ. max. min. conditions operation temperature unit f c n 120 mounting force with clip 20 v v t = 1 second v t = 1 minute isolation voltage mm mm 2.7 4.1 d spp/app creepage distance on surface | striking distance th rough air d spb/apb terminal to backside i rms rms current 70 a per terminal 150 -55 terminal to terminal iso247 similar part package voltage class dma10p1600hr iso247 (3) 1600 delivery mode quantity code no. ordering number marking on product ordering 50/60 hz, rms; i 1 ma isol DMA10P1200HR 517334 tube 30 DMA10P1200HR standard 3600 isol t stg c 150 storage temperature -55 3000 threshold voltage v 0.81 m ? v 0 max r 0 max slope resistance * 31 equivalent circuits for simulation t = vj i v 0 r 0 rectifier 175 c * on die level ixys reserves the right to change limits, condition s and dimensions. 20170213b data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
DMA10P1200HR s ? p 2x d3 d1 e1 4 1 2 3 l l1 2x b2 3x b b4 2x e 2x e2 d e q a a2 a1 c d2 2x e3 a3 min max min max a 4.70 5.30 0.185 0.209 a1 2.21 2.59 0.087 0.102 a2 1.50 2.49 0.059 0.098 a3 typ. 0.05 typ. 0.002 b 0.99 1.40 0.039 0.055 b2 1.65 2.39 0.065 0.094 b4 2.59 3.43 0.102 0.135 c 0.38 0.89 0.015 0.035 d 20.79 21.45 0.819 0.844 d1 typ. 8.90 typ. 0.350 d2 typ. 2.90 typ. 0.114 d3 typ. 1.00 typ. 0.039 e 15.49 16.24 0.610 0.639 e1 typ. 13.45 typ. 0.530 e2 4.31 5.48 0.170 0.216 e3 typ. 4.00 typ. 0.157 e 5.46 bsc 0.215 bsc l 19.80 20.30 0.780 0.799 l1 - 4.49 - 0.177 ? p 3.55 3.65 0.140 0.144 q 5.38 6.19 0.212 0.244 s 6.14 bsc 0.242 bsc dim. millimeter inches 1 2 3 outlines iso247 ixys reserves the right to change limits, condition s and dimensions. 20170213b data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
DMA10P1200HR 0.001 0.01 0.1 1 40 60 80 1 0 0 2 3 4 5 6 7 8 9 01 1 10 1 10 2 0.5 1.0 1.5 2.0 0 5 10 15 20 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 16 18 1 10 100 1000 10000 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0 50 100 150 200 0 4 8 12 16 20 24 28 i f [ a] v f [v] i fsm [a] t [s] i 2 t [a 2 s] t [ms] p tot [ w] i f(av)m [a] t amb [c] i f(av)m [a] t c [c] z thjc [k/w] fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current fig. 3 i 2 t versus time per diode fig. 4 power dissipation vs. direct output current and ambie nt temperature fig. 5 max. forward current vs. case temperature fig. 6 transient thermal impedance junction to case t [ms] 0 50 100 150 200 50 hz, 80%v rrm t vj = 45c t vj = 45c v r = 0 v t vj = 150c t vj = 150c t vj = 25c t vj = 125c t vj = 150c r thha = 4 k/w 8 k/w 10 k/w 12 k/w 16 k/w 20 k/w dc = 1 0.5 0.4 0.33 0.17 0.08 dc = 1 0.5 0.4 0.33 0.17 0.08 constants for z thjc calculation: i r thi (k/w) t i (s) 1 0.06 0.0004 2 0.23 0.0020 3 0.40 0.0040 4 0.71 0.0240 5 0.60 0.1500 rectifier ixys reserves the right to change limits, condition s and dimensions. 20170213b data according to iec 60747and per semiconductor un less otherwise specified ? 2017 ixys all rights reserved
|
